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  2. Insulated-gate bipolar transistor - Wikipedia

    en.wikipedia.org/wiki/Insulated-gate_bipolar...

    The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.

  3. HVDC converter - Wikipedia

    en.wikipedia.org/wiki/HVDC_converter

    To obtain a positive output voltage (+ ⁠ 1 / 2 ⁠ U d) the top two IGBT valves are turned on, to obtain a negative output voltage (-⁠ 1 / 2 ⁠ U d) the bottom two IGBT valves are turned on and to obtain zero output voltage the middle two IGBT valves are turned on. In this latter state, the two clamping diode valves complete the current ...

  4. Free-space path loss - Wikipedia

    en.wikipedia.org/wiki/Free-space_path_loss

    In telecommunications, the free-space path loss (FSPL) (also known as free-space loss, FSL) is the attenuation of radio energy between the feedpoints of two antennas that results from the combination of the receiving antenna's capture area plus the obstacle-free, line-of-sight (LoS) path through free space (usually air). [1]

  5. Path loss - Wikipedia

    en.wikipedia.org/wiki/Path_loss

    Path loss is a major component in the analysis and design of the link budget of a telecommunication system. This term is commonly used in wireless communications and signal propagation. Path loss may be due to many effects, such as free-space loss, refraction, diffraction, reflection, aperture-medium coupling loss, and absorption. Path loss is ...

  6. Steinmetz's equation - Wikipedia

    en.wikipedia.org/wiki/Steinmetz's_equation

    where is the time average power loss per unit volume in mW per cubic centimeter, is frequency in kilohertz, and is the peak magnetic flux density; , , and , called the Steinmetz coefficients, are material parameters generally found empirically from the material's B-H hysteresis curve by curve fitting. In typical magnetic materials, the ...

  7. Insertion loss - Wikipedia

    en.wikipedia.org/wiki/Insertion_loss

    In telecommunications, insertion loss is the loss of signal power resulting from the insertion of a device in a transmission line or optical fiber and is usually expressed in decibels (dB). If the power transmitted to the load before insertion is P T and the power received by the load after insertion is P R, then the insertion loss in decibels ...

  8. PS Power and Sample Size - Wikipedia

    en.wikipedia.org/wiki/PS_Power_and_Sample_Size

    Power, sample size, and the detectable alternative hypothesis are interrelated. The user specifies any two of these three quantities and the program derives the third. A description of each calculation, written in English, is generated and may be copied into the user's documents.

  9. Integrated gate-commutated thyristor - Wikipedia

    en.wikipedia.org/wiki/Integrated_gate-commutated...

    The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB. [1]

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