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Commercial systems use pulse etching with an expansion chamber [36] Brazzle, Dokmeci, et al. describe this process: [37] The mechanism of the etch is as follows. First, the XeF 2 adsorbs and dissociates to xenon and fluorine atoms on the surface of silicon. Fluorine is the main etchant in the silicon etching process.
Xenon difluoride, bromine trifluoride, chlorine trifluoride and fluorine can be used for gaseous silicon etching. [6] [7] Xenon difluoride is most commonly used to etch silicon in academia and industry, because it has a high selectivity towards other semiconductor materials, allows high process control and is easy to use at room temperature. [8 ...
In semiconductor manufacturing, isotropic etching is a method commonly used to remove material from a substrate via a chemical process using an etchant substance. The etchant may be in liquid-, gas- or plasma -phase, [ 1 ] although liquid etchants such as buffered hydrofluoric acid (BHF) for silicon dioxide etching are more often used.
Xenon difluoride (XeF 2) is a dry vapor phase isotropic etch for silicon originally applied for MEMS in 1995 at University of California, Los Angeles. [21] [22] Primarily used for releasing metal and dielectric structures by undercutting silicon, XeF 2 has the advantage of a stiction-free release unlike wet etchants.
Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
To prevent decomposition, the xenon tetroxide thus formed is quickly cooled into a pale-yellow solid. It explodes above −35.9 °C into xenon and oxygen gas, but is otherwise stable. A number of xenon oxyfluorides are known, including XeOF 2, XeOF 4, XeO 2 F 2, and XeO 3 F 2. XeOF 2 is formed by reacting OF 2 with xenon gas at low temperatures.