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High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
Chinese tech giants including Huawei and Baidu as well as startups are stockpiling high bandwidth memory (HBM) semiconductors from Samsung Electronics in anticipation of U.S. curbs on exports of ...
High bandwidth memory (HBM) are basically a stack of memory chips, small components that store data. They can store more information and transmit data more quickly than the older technology ...
High Bandwidth Memory (HBM) is a high-performance RAM interface for 3D-stacked SDRAM from Samsung, AMD and SK Hynix. It is designed to be used in conjunction with high-performance graphics accelerators and network devices. [39] The first HBM memory chip was produced by SK Hynix in 2013. [40]
Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, [ 2 ] [ 3 ] [ 4 ] it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, [ 5 ...
SINGAPORE/BEIJING (Reuters) -Two Chinese chipmakers are in the early stages of producing high bandwidth memory (HBM) semiconductors used in artificial intelligence chipsets, according to sources ...
Graphics DDR SDRAM (GDDR SDRAM) is a type of synchronous dynamic random-access memory (SDRAM) specifically designed for applications requiring high bandwidth, [1] e.g. graphics processing units (GPUs).
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.