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  2. 5 nm process - Wikipedia

    en.wikipedia.org/wiki/5_nm_process

    In October 2019, TSMC reportedly started sampling 5 nm A14 processors for Apple. [22] At the 2020 IEEE IEDM conference, TSMC reported their 5 nm process had 1.84x higher density than their 7nm process. [23] At IEDM 2019, TSMC revealed two versions of 5 nm, a DUV version with a 5.5-track cell, and an (official) EUV version with a 6-track cell.

  3. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    Fujio Masuoka, Hiroshi Takato, Kazumasa Sunouchi, N. Okabe Toshiba [54] [55] [56] December 1989: 200 nm: FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley ...

  4. Fin field-effect transistor - Wikipedia

    en.wikipedia.org/wiki/Fin_field-effect_transistor

    A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.

  5. Subthreshold conduction - Wikipedia

    en.wikipedia.org/wiki/Subthreshold_conduction

    Subthreshold leakage in an nFET. Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

  6. Multigate device - Wikipedia

    en.wikipedia.org/wiki/Multigate_device

    Different FinFET structures, which can be modeled by BSIM-CMG. BSIMCMG106.0.0, [65] officially released on March 1, 2012 by UC Berkeley BSIM Group, is the first standard model for FinFETs. BSIM-CMG is implemented in Verilog-A. Physical surface-potential-based formulations are derived for both intrinsic and extrinsic models with finite body doping.

  7. Leakage (electronics) - Wikipedia

    en.wikipedia.org/wiki/Leakage_(electronics)

    Leakage current is also any current that flows when the ideal current is zero. Such is the case in electronic assemblies when they are in standby, disabled, or "sleep" mode ( standby power ). These devices can draw one or two microamperes while in their quiescent state compared to hundreds or thousands of milliamperes while in full operation.