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The Shockley–Queisser limit, zoomed in near the region of peak efficiency. In a traditional solid-state semiconductor such as silicon, a solar cell is made from two doped crystals, one an n-type semiconductor, which has extra free electrons, and the other a p-type semiconductor, which is lacking free electrons, referred to as "holes."
The Shockley-Queisser limit for the efficiency of a single-junction solar cell under unconcentrated sunlight. This calculated curve uses actual solar spectrum data, and therefore the curve is wiggly from IR absorption bands in the atmosphere. This efficiency limit of about 34% can be exceeded by multijunction solar cells.
The numbers are normally not similar as you suggest. But in any case, f c cannot be more than 1, and the upper limit (the Shockley-Queisser limit) requires taking f c = 1. Eric Kvaalen 19:05, 6 September 2016 (UTC) Yes, virtually all above-gap photons come from recombination, but not all recombinations create above-bandgap photons.
The theoretical performance of a solar cell was first studied in depth in the 1960s, and is today known as the Shockley–Queisser limit. The limit describes several loss mechanisms that are inherent to any solar cell design. The first are the losses due to blackbody radiation, a loss mechanism that affects any material object above absolute zero.
According to the Shockley–Queisser limit, the majority of a cell's theoretical efficiency is due to the difference in energy between the bandgap and solar photon. Any photon with more energy than the bandgap can cause photoexcitation, but any energy above the bandgap energy is lost.
The Shockley–Queisser limit for the efficiency of a single-junction solar cell under unconcentrated sunlight at 273 K. This calculated curve uses actual solar spectrum data, and therefore the curve is wiggly from IR absorption bands in the atmosphere. This efficiency limit of ~34% can be exceeded by multijunction solar cells.
This efficiency is less than that of a multijunction cell with infinite junctions. This is because in multijunction cells, electrons are captured exactly after being excited to a higher energy state, while in an IB device, the electrons still need another energy transition to reach the conduction band and be collected.
The Shockley–Queisser limit radiative efficiency limit, also known as the detailed balance limit, [105] [106] is about 31% under an AM1.5G solar spectrum at 1000 W/m 2, for a Perovskite bandgap of 1.55 eV. [107] This is slightly smaller than the radiative limit of gallium arsenide of bandgap 1.42 eV which can reach a radiative efficiency of 33%.