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An inverter circuit outputs a voltage representing the opposite logic-level to its input. Its main function is to invert the input signal applied. If the applied input is low then the output becomes high and vice versa. Inverters can be constructed using a single NMOS transistor or a single PMOS transistor coupled with a resistor. Since this ...
To improve their efficiency, high-power inverters (from about 10 kW) frequently make use of a technique referred to as a three-level design (three-level inverter). [3] Forming the basis of the S3L inverter is a hard-switching three-level inverter of this kind with a T-type topology. [4] This base design is supplemented by a snubber circuit ...
The bootstrap circuit uses a coupling capacitor, formed from the gate/source capacitance of a transistor, to drive a signal line to slightly greater than the supply voltage. [10] Some all-pMOS integrated circuits such as the Intel 4004 and the Intel 8008 use that 2-transistor "bootstrap load" circuit. [11] [12] [13]
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
In most circuits, this means pulling an enhancement-mode MOSFET's gate voltage towards its drain voltage turns it on. In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example).
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
A MOSFET can be made to operate as a resistor, so the whole circuit can be made with n-channel MOSFETs only. NMOS circuits are slow to transition from low to high. When transitioning from high to low, the transistors provide low resistance, and the capacitive charge at the output drains away very quickly (similar to discharging a capacitor ...
Since early transistors were not available with sufficient voltage and current ratings for most inverter applications, it was the 1957 introduction of the thyristor or silicon-controlled rectifier (SCR) that initiated the transition to solid-state inverter circuits. 12-pulse line-commutated inverter circuit