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The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
The wafer platter is electrically isolated from the rest of the chamber. Gas enters through small inlets in the top of the chamber, and exits to the vacuum pump system through the bottom. The types and amount of gas used vary depending upon the etch process; for instance, sulfur hexafluoride is commonly used for etching silicon .
Wafer fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits on semiconductor wafers in a semiconductor device fabrication process. Examples include production of radio frequency amplifiers, LEDs, optical computer components, and microprocessors for computers. Wafer ...
a wide variety of other processes for cleaning, planarizing, or modifying the chemical properties of microfabricated devices can also be performed. Some examples include: Doping by either thermal diffusion or ion implantation; Chemical-mechanical planarization (CMP) Wafer cleaning, also known as "surface preparation" (see below) Wire bonding
Chemical mechanical polishing (CMP) (also called chemical mechanical planarization) is a process of smoothing surfaces with the combination of chemical and mechanical forces. It can be thought of as a hybrid of chemical etching and free abrasive polishing. [ 1 ]
Salicide process. The salicide process begins with deposition of a thin transition metal layer over fully formed and patterned semiconductor devices (e.g. transistors).The wafer is heated, allowing the transition metal to react with exposed silicon in the active regions of the semiconductor device (e.g., source, drain, gate) forming a low-resistance transition metal silicide.
Before bonding two wafers, those two solids need to be free of impurities that can base on particle, organic and/or ionic contamination. To achieve the cleanliness without degrading the surface quality, the wafer passes a dry cleaning, e.g. plasma treatments or UV/ozone cleaning, or a wet chemical cleaning procedure. [2]