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In indirect band gap semiconductors, the carrier lifetime strongly depends on the concentration of recombination centers. Gold atoms act as highly efficient recombination centers, silicon for some high switching speed diodes and transistors is therefore alloyed with a small amount of gold. Many other atoms, e.g. iron or nickel, have similar ...
A semiconductor is a material that is between the conductor and insulator in ability to conduct ... in which conductivity decreases with an increase in temperature. [4]
At absolute zero temperature, all of the electrons have energy below the Fermi level; but at non-zero temperatures the energy levels are filled following a Fermi-Dirac distribution. In undoped semiconductors the Fermi level lies in the middle of a forbidden band or band gap between two allowed bands called the valence band and the conduction ...
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
Semiconductors are doped with donors and/or acceptors, which are typically ionized, and are thus charged. The Coulombic forces will deflect an electron or hole approaching the ionized impurity. This is known as ionized impurity scattering. The amount of deflection depends on the speed of the carrier and its proximity to the ion.
When this happens, the semiconductor is said to be in a state of velocity saturation. [2] Charge carriers normally move at an average drift speed proportional to the electric field strength they experience temporally. The proportionality constant is known as mobility of the carrier, which is a material property.
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The avalanche breakdown occurs in lightly doped junctions, which produce a wider depletion region. Temperature increase in the junction increases the contribution of the Zener effect to breakdown, and decreases the contribution of the avalanche effect.