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A heatsink's thermal mass can be considered as a capacitor (storing heat instead of charge) and the thermal resistance as an electrical resistance (giving a measure of how fast stored heat can be dissipated). Together, these two components form a thermal RC circuit with an associated time constant given by the product of R and C. This quantity ...
Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock.
The heat dissipation in integrated circuits problem has gained an increasing interest in recent years due to the miniaturization of semiconductor devices. The temperature increase becomes relevant for cases of relatively small-cross-sections wires, because such temperature increase may affect the normal behavior of semiconductor devices.
The typical efficiency of TEGs is around 5–8%, although it can be higher. Older devices used bimetallic junctions and were bulky. More recent devices use highly doped semiconductors made from bismuth telluride (Bi 2 Te 3), lead telluride (PbTe), [10] calcium manganese oxide (Ca 2 Mn 3 O 8), [11] [12] or combinations thereof, [13] depending on application temperature.
A semiconductor is a material that is between the conductor and ... which do not require material of ... The properties of the time-temperature coefficient of ...
Furnace anneals are performed by equipment especially built to heat semiconductor wafers. Furnaces are capable of processing many wafers at a time, but each process can last between several hours and a day. Increasingly, furnace anneals are being supplanted by Rapid Thermal Anneal (RTA) or Rapid Thermal Processing (RTP). This is due to the ...
The transistor's manufacturer will specify parameters in the datasheet called the absolute thermal resistance from junction to case (symbol: ), and the maximum allowable temperature of the semiconductor junction (symbol: ). The specification for the design should include a maximum temperature at which the circuit should function correctly.
In semiconductor lasers, the carrier lifetime is the time it takes an electron before recombining via non-radiative processes in the laser cavity. In the frame of the rate equations model , carrier lifetime is used in the charge conservation equation as the time constant of the exponential decay of carriers.