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  2. Ruthenium boride - Wikipedia

    en.wikipedia.org/wiki/Ruthenium_boride

    Ruthenium borides are compounds of ruthenium and boron. Their most remarkable property is potentially high hardness. Their most remarkable property is potentially high hardness. Vickers hardness H V = 50 GPa was reported for thin films composed of RuB 2 and Ru 2 B 3 phases. [ 1 ]

  3. Refractive index and extinction coefficient of thin film ...

    en.wikipedia.org/wiki/Refractive_index_and...

    The challenge of characterizing thin films involves extracting t, n(λ) and k(λ) of the film from the measurement of R(λ) and/or T(λ). This can be achieved by combining the Forouhi–Bloomer dispersion equations for n ( λ ) and k ( λ ) with the Fresnel equations for the reflection and transmission of light at an interface [ 21 ] to obtain ...

  4. Extreme ultraviolet lithography - Wikipedia

    en.wikipedia.org/wiki/Extreme_ultraviolet...

    Extreme ultraviolet lithography (EUVL, also known simply as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses 13.5 nm extreme ultraviolet (EUV) light from a laser-pulsed tin (Sn) plasma to create intricate patterns on semiconductor substrates.

  5. Thin-film solar cell - Wikipedia

    en.wikipedia.org/wiki/Thin-film_solar_cell

    Thin-film solar cells, a second generation of photovoltaic (PV) solar cells: Top: thin-film silicon laminates being installed onto a roof. Middle: CIGS solar cell on a flexible plastic backing and rigid CdTe panels mounted on a supporting structure Bottom: thin-film laminates on rooftops Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or ...

  6. Thick-film technology - Wikipedia

    en.wikipedia.org/wiki/Thick-film_technology

    Typically thick film circuit substrates are Al 2 O 3 /alumina, beryllium oxide (BeO), aluminum nitride (AlN), stainless steel, sometimes even some polymers and in rare cases even silicon (Si) coated with silicon dioxide (SiO 2)., [5] [6] Commonly used substrates for thick-film processes are 94 or 96% alumina.

  7. Diffusion barrier - Wikipedia

    en.wikipedia.org/wiki/Diffusion_barrier

    The thickness of the barrier films is also quite important; with too thin a barrier layer, the inner copper may contact and poison the very devices that they supply with energy and information; with barrier layers too thick, these wrapped stacks of two barrier metal films and an inner copper conductor can have a greater total resistance than ...