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The processor line chosen this rendition are 6th generation Intel processors; the i3-6100T, i5-6400T, or i7-6700T. The RAM from factory comes in either 1 stick of 8 GB or 16 GB configurations of DDR4 memory clocked at 2133 MHz, and the system comes with one SO-DIMM slot. Hard-drive options have been expanded to include a HDD, SSD, or both.
A 16GB [1] DDR4 SO-DIMM module by Micron. DDR4 memory is supplied in 288-pin dual in-line memory modules (DIMMs), similar in size to 240-pin DDR3 DIMMs. DDR4 RAM modules feature pins that are spaced more closely at 0.85 mm compared to the 1.0 mm spacing in DDR3, allowing for a higher pin density within the same standard DIMM length of 133.35 mm ...
A DIMM (Dual In-Line Memory Module) is a popular type of memory module used in computers. It is a printed circuit board with one or both sides (front and back) holding DRAM chips and pins . [ 1 ] The vast majority of DIMMs are manufactured in compliance with JEDEC memory standards , although there are proprietary DIMMs.
Double Data Rate 5 Synchronous Dynamic Random-Access Memory (DDR5 SDRAM) is a type of synchronous dynamic random-access memory.Compared to its predecessor DDR4 SDRAM, DDR5 was planned to reduce power consumption, while doubling bandwidth. [5]
The 2016 12.5" laptop had an Intel Core m3 (th generation) processor, 4 GB DDR4 RAM and a 128 GB SSD. The price is RMB 3,499 and officially is only sold in mainland China. The 2016 13.3" laptop had an Intel i5/i7 processor, 8 GB DDR4 RAM and a 256 GB SSD. It weighs 1.07 kg and is 12.9mm thin.
A flash drive (also thumb drive, memory stick, and pen drive/pendrive) [1] [note 1] is a data storage device that includes flash memory with an integrated USB interface. A typical USB drive is removable, rewritable, and smaller than an optical disc , and usually weighs less than 30 g (1 oz).
At Hot Chips 2016, Samsung announced GDDR6 as the successor of GDDR5X. [5] [6] Samsung later announced that the first products would be 16 Gbit/s, 1.35 V chips.[7] [8] In January 2018, Samsung began mass production of 16 Gb (2 GB) GDDR6 chips, fabricated on a 10 nm class process and with a data rate of up to 18 Gbit/s per pin.
Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but using a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies that offer the same functionality as flash memory .