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If the gate voltage is above the threshold voltage (right figure), the "enhancement-mode" transistor is turned on, due to there being many electrons in the channel at the oxide-silicon interface, creating a low-resistance channel where charge can flow from drain to source.
Unlike a solid resistor, the liquid resistor is self healing in the event of overload. Normally the resistance is set up during commissioning, and then left fixed. [7] Modern motor starters [8] are totally enclosed and the electrode movement is servo motor controlled. Typically a 1 tonne tank will start a 1 megawatt slip ring type motor, but ...
Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
Metal-oxide varistor manufactured by Siemens & Halske AG. Modern varistor schematic symbol, which is the same as a thermistor symbol [1]. A varistor (a.k.a. voltage-dependent resistor (VDR)) is a surge protecting electronic component with an electrical resistance that varies with the applied voltage. [2]
An ohmic contact is a non-rectifying electrical junction: a junction between two conductors that has a linear current–voltage (I–V) curve as with Ohm's law.Low-resistance ohmic contacts are used to allow charge to flow easily in both directions between the two conductors, without blocking due to rectification or excess power dissipation due to voltage thresholds.
Oscilloscope OL-1 from 1954, the company's first with a relatively small 3-inch CRT which allowed for a highly competitive price of US$ 29.50 (equivalent to $335 in 2023) for the DIY kit. [1] Heathkit is the brand name of kits and other electronic products produced and marketed by the Heath Company.
At the output the dependent voltage source delivers voltage A v V A = V A to the load, again without voltage division because the output resistance of the buffer is zero. A Thévenin equivalent circuit of the combined original Thévenin source and the buffer is an ideal voltage source V A with zero Thévenin resistance.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.