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Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge ( plasma ) of an appropriate gas mixture being shot (in pulses) at a sample.
Plasma etching can be isotropic, i.e., exhibiting a lateral undercut rate on a patterned surface approximately the same as its downward etch rate, or can be anisotropic, i.e., exhibiting a smaller lateral undercut rate than its downward etch rate. Such anisotropy is maximized in deep reactive ion etching (DRIE). The use of the term anisotropy ...
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure by an electromagnetic field.
A standard, nearly isotropic plasma etch. The plasma contains some ions, which attack the wafer from a nearly vertical direction. Sulfur hexafluoride [SF 6] is often used for silicon. Deposition of a chemically inert passivation layer. (For instance, Octafluorocyclobutane [C 4 F 8] source gas yields a substance similar to Teflon.)
The response of plasma to electromagnetic fields is used in many modern devices and technologies, such as plasma televisions or plasma etching. [8] Depending on temperature and density, a certain number of neutral particles may also be present, in which case plasma is called partially ionized.
A number of adhesion promotion methods have been developed to enhance PTFE bond strength. The primary methods currently used in industry are sodium etching and plasma etching. Results of ion beam treatment and laser surface roughening have also been reported in the literature, but do not have a significant presence as commercial processes.