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Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr). The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Molecular beams are useful for fabricating thin films in molecular beam epitaxy and artificial structures such as quantum wells, quantum wires, and quantum dots. Molecular beams have also been applied as crossed molecular beams. The molecules in the molecular beam can be manipulated by electrical fields and magnetic fields. [1]
John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.
In this method, a source material is heated to produce an evaporated beam of particles, which travel through a very high vacuum (10 −8 Pa; practically free space) to the substrate and start epitaxial growth. [14] [15] Chemical beam epitaxy, on the other hand, is an ultra-high vacuum process that uses gas phase precursors to generate the ...
Chemical beam epitaxy was first demonstrated by W.T. Tsang in 1984. [1] This technique was then described as a hybrid of metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) that exploited the advantages of both the techniques. In this initial work, InP and GaAs were grown using gaseous group III and V alkyls.
Silicon epi wafers were first developed around 1966 and achieved commercial acceptance by the early 1980s. [6] Methods for growing the epitaxial layer on monocrystalline silicon or other wafers include: various types of chemical vapor deposition (CVD) classified as Atmospheric pressure CVD (APCVD) or metal organic chemical vapor deposition (MOCVD), as well as molecular beam epitaxy (MBE). [7]
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]
Selective area epitaxy is the local growth of epitaxial layer through a patterned amorphous dielectric mask (typically SiO 2 or Si 3 N 4) deposited on a semiconductor substrate. Semiconductor growth conditions are selected to ensure epitaxial growth on the exposed substrate, but not on the dielectric mask. [ 1 ]