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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
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The tool is used primarily for determining doping structures in silicon semiconductors. Deep and shallow profiles are shown in Figure 2. Figure 2 The shallow profile on the left, the deep profile on the right. Carrier concentration is plotted against depth. Regions with a net electron concentration are denoted as "n" (or n-type).
The doping can be also used to change the refraction index in optical fibers, especially in the double-clad fibers. The optical dopants are characterized with lifetime of excitation and the effective absorption and emission cross-sections, which are main parameters of an active dopant.
A pulsed laser is directed at the silicon wafer and this results in localised melting and subsequent recrystallisation of the silicon wafer material, allowing boron atoms in the gas to diffuse into the molten sections of the silicon wafer. [1] The result of this process is a silicon wafer with boron impurities, creating a P-type semiconductor.
Silicon wafers are generally not 100% pure silicon, but are instead formed with an initial impurity doping concentration between 10 13 and 10 16 atoms per cm 3 of boron, phosphorus, arsenic, or antimony which is added to the melt and defines the wafer as either bulk n-type or p-type. [27]
Monolayer doping (MLD) in semiconductor production is a well controlled, wafer-scale surface doping technique first developed at the University of California, Berkeley, in 2007. [1] This work is aimed for attaining controlled doping of semiconductor materials with atomic accuracy, especially at nanoscale , which is not easily obtained by other ...
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor.