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Silicon is a chemical element; it has symbol Si and atomic number 14. It is a hard, brittle crystalline solid with a blue-grey metallic luster, and is a tetravalent metalloid and semiconductor. It is a member of group 14 in the periodic table: carbon is above it; and germanium, tin, lead, and flerovium are below it. It is relatively unreactive.
Silicon nitride is a chemical compound of the elements silicon and nitrogen. Si. 3N. 4 (Trisilicon tetranitride) is the most thermodynamically stable and commercially important of the silicon nitrides, [6] and the term ″ Silicon nitride ″ commonly refers to this specific composition.
The density varies with temperature, but not linearly: as the temperature increases, the density rises to a peak at 3.98 °C (39.16 °F) and then decreases; [32] the initial increase is unusual because most liquids undergo thermal expansion so that the density only decreases as a function of temperature.
New York: The International Nickel Company, Inc., 1941: 16. — "Values ranging from 21.3 to 21.5 gm/cm 3 at 20 °C have been reported for the density of annealed platinum; the best value being about 21.45 gm/cm 3 at 20 °C." 21.46 g/cm 3 — Rose, T. Kirke. The Precious Metals, Comprising Gold, Silver and Platinum.
In energy storage and fuels. For energy storage, the energy density relates the stored energy to the volume of the storage equipment, e.g. the fuel tank. The higher the energy density of the fuel, the more energy may be stored or transported for the same amount of volume. The energy of a fuel per unit mass is called its specific energy.
Charge carrier density. Charge carrier density, also known as carrier concentration, denotes the number of charge carriers per volume. In SI units, it is measured in m −3. As with any density, in principle it can depend on position. However, usually carrier concentration is given as a single number, and represents the average carrier density ...
1802 K. 1529 °C. 2784 °F. The Gmelin rare earths handbook lists 1522 °C and 1550 °C as two melting points given in the literature, the most recent reference [Handbook on the chemistry and physics of rare earths, vol.12 (1989)] is given with 1529 °C.
Between 700 and 1200 °C a three-dimensional amorphous network develops containing Si, C and N ("SiCN ceramics") with a density of ca. 2 g/cm 3. A further temperature increase can result in crystallization of the amorphous material and the formation of silicon nitride, silicon carbide and carbon. This so-called pyrolysis of the polysilazanes ...