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A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
FinFET: Digh Hisamoto, Toru Kaga, Yoshifumi Kawamoto, Eiji Takeda Hitachi Central Research Laboratory [57] [58] [59] December 1998: 17 nm: FinFET Digh Hisamoto, Chenming Hu, Tsu-Jae King Liu, Jeffrey Bokor: University of California (Berkeley) [60] [61] 2001 15 nm: FinFET Chenming Hu, Yang-Kyu Choi, Nick Lindert, Tsu-Jae King Liu: University of ...
[12] [13] In 2015, Intel described a lateral nanowire (or gate-all-around) FET concept for the "5 nm" node. [14] In 2017, IBM revealed that it had created "5 nm" silicon chips, [15] using silicon nanosheets in a gate-all-around configuration (GAAFET), a break from the usual FinFET design. The GAAFET transistors used had 3 nanosheets stacked on ...
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
Julius Edgar Lilienfeld, who proposed the concept of a field-effect transistor in 1925.. The concept of a field-effect transistor (FET) was first patented by the Austro-Hungarian born physicist Julius Edgar Lilienfeld in 1925 [1] and by Oskar Heil in 1934, but they were unable to build a working practical semiconducting device based on the concept.
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A particular choice of the scalar and vector potentials is a gauge (more precisely, gauge potential) and a scalar function ψ used to change the gauge is called a gauge function. [citation needed] The existence of arbitrary numbers of gauge functions ψ(r, t) corresponds to the U(1) gauge freedom of this theory. Gauge fixing can be done in many ...
On February 18, 2011, Intel announced that it would construct a new $5 billion semiconductor fabrication plant in Arizona, designed to manufacture chips using the "14 nm" manufacturing processes and leading-edge 300 mm wafers. [12] [13] The new fabrication plant was to be named Fab 42, and construction was meant to start in the middle of 2011 ...