Ads
related to: first semiconductor laser
Search results
Results From The WOW.Com Content Network
Hall developed the first semiconductor laser diode in 1962, while working at General Electric in Schenectady, New York. [4] In the 1970s, Hall's work focused on photovoltaics and solar cells. He retired in 1987, having been granted 43 U.S. patents during his career.
A laser diode (LD, also injection laser diode or ILD or semiconductor laser or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. [1]: 3
This first semiconductor laser could only be used in pulsed-beam operation, and when cooled to liquid nitrogen temperatures (77 K). In 1970, Zhores Alferov , in the USSR, and Izuo Hayashi and Morton Panish of Bell Labs also independently developed room-temperature, continual-operation diode lasers, using the heterojunction structure.
The first laser, invented by Theodore Maiman in May 1960. Nd:YAG laser: 1.064 μm, (1.32 μm) Flashlamp, laser diode: Material processing, rangefinding, laser target designation, surgery, tattoo removal, hair removal, research, pumping other lasers (combined with frequency doubling to produce a green 532 nm beam). One of the most common high ...
Reported in the January 5 issue of the journal Applied Physics Letters in 2004, Milton Feng and Nick Holonyak, the inventor of the first practical light-emitting diode and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor.
The key major accomplishment was the 1962 observation of nearly 100% internal efficiency in the conversion of electron-hole pairs to photons in GaAs semiconductor devices at MIT Lincoln Laboratory, RCA Laboratories, and Texas Instruments, Inc., shortly thereafter followed by the demonstration of the first diode laser by General Electric and IBM.
In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
While working for the Ministry of Defence, Hilsum helped develop commercial applications for gallium arsenide, and was responsible for creating the UK's first semiconductor laser. He was one of the developers of the Ridley-Watkins-Hilsum theory that provided the theoretical basis of the Gunn diode , [ 14 ] and his research helped form the basis ...