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The optical band gap (see below) determines what portion of the solar spectrum a photovoltaic cell absorbs. [18] Strictly, a semiconductor will not absorb photons of energy less than the band gap; whereas most of the photons with energies exceeding the band gap will generate heat. Neither of them contribute to the efficiency of a solar cell.
In semiconductors, the band gap of a semiconductor can be of two basic types, a direct band gap or an indirect band gap. The minimal-energy state in the conduction band and the maximal-energy state in the valence band are each characterized by a certain crystal momentum (k-vector) in the Brillouin zone. If the k-vectors are different, the ...
Thus, extrapolating this linear region to the abscissa yields the energy of the optical bandgap of the amorphous material. A similar procedure is adopted to determine the optical bandgap of crystalline semiconductors. [5] In this case, however, the ordinate is given by (α) 1/r, in which the exponent 1/r denotes the nature of the transition: [6 ...
In a semiconductor or band insulator, the Fermi level is surrounded by a band gap, referred to as the band gap (to distinguish it from the other band gaps in the band structure). The closest band above the band gap is called the conduction band, and the closest band beneath the band gap is called the valence band.
The model has been used to fit the complex refractive index of amorphous semiconductor materials at frequencies greater than their optical band gap. The dispersion relation bears the names of Jan Tauc and Hendrik Lorentz, whose previous works [1] were combined by G. E. Jellison and F. A. Modine to create the model.
In the simplest description of a semiconductor, a single parameter is used to quantify the onset of optical absorption: the band gap, . In this description, semiconductors are described as being able to absorb photons above E G {\displaystyle E_{G}} , but are transparent to photons below E G {\displaystyle E_{G}} . [ 2 ]
Tin sulfide (SnS) is a semiconductor with direct optical band gap of 1.3 eV and absorption coefficient above 10 4 cm −1 for photon energies above 1.3 eV. It is a p-type semiconductor whose electrical properties can be tailored by doping and structural modification and has emerged as one of the simple, non-toxic and affordable material for ...
Wide-bandgap semiconductors (also known as WBG semiconductors or WBGSs) are semiconductor materials which have a larger band gap than conventional semiconductors. Conventional semiconductors like silicon and selenium have a bandgap in the range of 0.7 – 1.5 electronvolt (eV), whereas wide-bandgap materials have bandgaps in the range above 2 eV.