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In photolithography, photoresist compounds are used create a mask on the surface of a silicon wafer. The mask allows for precise control over the doping and etching processes used to form devices on silicon wafers. It is important for the mask to hold up to chemical attack during the etching process.
In photolithography, several masks are used in turn, each one reproducing a layer of the completed design, and together known as a mask set. A curvilinear photomask has patterns with curves, which is a departure from conventional photomasks which only have patterns that are completely vertical or horizontal, known as manhattan geometry.
A benefit of using phase-shift masks in lithography is the reduced sensitivity to variations of feature sizes on the mask itself. This is most commonly used in alternating phase-shift masks, where the linewidth becomes less and less sensitive to the chrome width on the mask, as the chrome width decreases.
In both cases, the mask covers the entire wafer, and simultaneously patterns every die. Contact printing/lithography is liable to damage both the mask and the wafer, [38] and this was the primary reason it was abandoned for high volume production. Both contact and proximity lithography require the light intensity to be uniform across an entire ...
An illustration of OPC (Optical Proximity Correction). The blue Γ-like shape is what chip designers would like printed on a wafer, in green is the pattern on a mask after applying optical proximity correction, and the red contour is how the shape actually prints on the wafer (quite close to the desired blue target).
In semiconductor device fabrication, the inverse lithography technology (ILT) is an approach to photomask design. It is basically an approach to solve an inverse imaging problem : to calculate the shapes of the openings in a photomask ("source") so that the passing light produces a good approximation of the desired pattern ("target") on the ...
A patterned mask is then applied to the surface to block light, so that only unmasked regions of the material will be exposed to light. A solvent, called a developer, is then applied to the surface. In the case of a positive photoresist, the photo-sensitive material is degraded by light and the developer will dissolve away the regions that were ...
Scanning probe lithography [1] (SPL) describes a set of nanolithographic methods to pattern material on the nanoscale using scanning probes. It is a direct-write, mask-less approach which bypasses the diffraction limit and can reach resolutions below 10 nm. [ 2 ]
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