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Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Ion Implantation is a technique extensively used in the field of materials science for material modification. The effect it has on nanomaterials allows manipulation of mechanical, electronic, morphological, and optical properties. [1]
PIII-process with ECR-plasma source and magnetron. Plasma-immersion ion implantation (PIII) [1] or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to ...
The Electron beam ion trap (EBIT), based on the same principle, can produce up to bare uranium ions and can be used as an ion source as well. Heavy ions can also be generated with an ion gun which typically uses the thermionic emission of electrons to ionize a substance in its gaseous state.
At low energy molecular ion beams are deposited intact (ion soft landing), while at a high deposition energy molecular ions fragment and atomic ions can penetrate further into the material, a process known as ion implantation. [4] Ion optics (such as radio frequency quadrupoles) can be mass selective. In IBD they are used to select a single, or ...
Intevac Qualifies Ion Implantation Production System at Tier 1 Solar Company Company Narrows Q2'13 Revenue Guidance Range SANTA CLARA, Calif.--(BUSINESS WIRE)-- Intevac, Inc. (NAS: IVAC) announced ...
It used both ion implantation and diffusion to form the source and drain using the gate electrode as the mask to define the source and drain regions. The Bell Labs team attended this meeting of the IEDM in 1966, and they discussed this work with Bower after his presentation in 1966.
Ion beam mixing can be further enhanced by heat spike effects [4] Ion mixing (IM) is essentially similar in result to interdiffusion, hence most models of ion mixing involve an effective diffusion coefficient that is used to characterize thickness of the reacted layer as a function of ion beam implantation over a period of time. [3]