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The junction field-effect transistor (JFET) is one of the simplest types of field-effect transistor. [1] JFETs are three-terminal semiconductor devices that can be used as electronically controlled switches or resistors , or to build amplifiers .
In field-effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an on state or an off state at zero gate–source voltage. Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits.
When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead. [ 1 ] [ 2 ] This is somewhat confusing since pinch off applied to insulated-gate field-effect transistor (IGFET) refers to the channel pinching that leads to current saturation behavior under high source–drain bias ...
The first FET device to be successfully built was the junction field-effect transistor (JFET). [2] A JFET was first patented by Heinrich Welker in 1945. [ 4 ] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950.
This field penetration alters the conductivity of the semiconductor near its surface, and is called the field effect. The field effect underlies the operation of the Schottky diode and of field-effect transistors, notably the MOSFET, the JFET and the MESFET. [1]
The basic principle of the field-effect transistor (FET) was first proposed by physicist Julius Edgar Lilienfeld when he filed a patent for a device similar to MESFET in 1926, and for an insulated-gate field-effect transistor in 1928. [13] [56] The FET concept was later also theorized by engineer Oskar Heil in the 1930s and by William Shockley ...
Figure 1: Basic N-channel JFET common-source circuit (neglecting biasing details). Figure 2: Basic N-channel JFET common-source circuit with source degeneration. In electronics, a common-source amplifier is one of three basic single-stage field-effect transistor (FET) amplifier topologies, typically used as a voltage or transconductance amplifier.
A multigate device employing independent gate electrodes is sometimes called a multiple-independent-gate field-effect transistor (MIGFET). The most widely used multi-gate devices are the FinFET (fin field-effect transistor) and the GAAFET (gate-all-around field-effect transistor), which are non-planar transistors, or 3D transistors .