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The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
Band diagram for NPN transistor at equilibrium Band diagram for NPN transistor in active mode, showing injection of electrons from emitter to base, and their overshoot into the collector. BJTs can be thought of as two diodes (p–n junctions) sharing a common region that minority carriers can move through.
Date/Time Thumbnail Dimensions User Comment; current: 16:08, 31 August 2012: 720 × 720 (7 KB): Michael9422 {{subst:Upload marker added by en.wp UW}} {{Information |Description = {{en|A simple NPN transistor amplifier circuit diagram with transistor labels.}} |Source = I created a postscript file, and converted it too SVG using the pstoedit program. |Date = ...
Common circuit diagram symbols (US ANSI symbols) An electronic symbol is a pictogram used to represent various electrical and electronic devices or functions, such as wires, batteries, resistors, and transistors, in a schematic diagram of an electrical or electronic circuit. These symbols are largely standardized internationally today, but may ...
Schematic diagram of a single-electron transistor Left to right: energy levels of source, island and drain in a single-electron transistor for the blocking state (upper part) and transmitting state (lower part). The SET has, like the FET, three electrodes: source, drain, and a gate. The main technological difference between the transistor types ...
The SB-FET (Schottky-barrier field-effect transistor) is a field-effect transistor with metallic source and drain contact electrodes, which create Schottky barriers at both the source-channel and drain-channel interfaces. [64] [65] The GFET is a highly sensitive graphene-based field effect transistor used as biosensors and chemical sensors.
Energy band diagram of a simple NPN w:bipolar junction transistor in forward-active mode showing electron energy versus position. The w:depletion regions of the emitter-base and base-collector junctions are marked.
The load line diagram at right is for a resistive load in a common emitter circuit. The load line shows how the collector load resistor (R L ) constrains the circuit voltage and current. The diagram also plots the transistor's collector current I C versus collector voltage V CE for different values of base current I base .