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Under reverse bias, the diode equation's exponential term is near 0, so the current is near the somewhat constant reverse current value (roughly a picoampere for silicon diodes or a microampere for germanium diodes, [1] although this is obviously a function of size).
A PN junction in forward bias mode, the depletion width decreases. Both p and n junctions are doped at a 1e15/cm3 doping level, leading to built-in potential of ~0.59V. Observe the different Quasi Fermi levels for conduction band and valence band in n and p regions (red curves). A depletion region forms instantaneously across a p–n junction.
A silicon p–n junction in reverse bias. Connecting the p-type region to the negative terminal of the voltage supply and the n-type region to the positive terminal corresponds to reverse bias. If a diode is reverse-biased, the voltage at the cathode is comparatively higher than at the anode. Therefore, very little current flows until the diode ...
This band alignment is due to the biasing conditions that correspond with forward-active mode; forward bias on the emitter-base junction and reverse bias on the base-collector junction. Licensing I, the copyright holder of this work, hereby publish it under the following license:
When >, a forward bias, the band bends downwards. A reverse bias (<) would cause an accumulation of holes on the surface which would bend the band upwards. This follows again from Poisson's equation. [5] As an example the band bending induced by the forming of a p-n junction or a metal-semiconductor junction can be modified by applying a bias ...
Using the Shockley equation, the small-signal diode resistance of the diode can be derived about some operating point where the DC bias current is and the Q-point applied voltage is . [6] To begin, the diode small-signal conductance g D {\displaystyle g_{D}} is found, that is, the change in current in the diode caused by a small change in ...
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Reverse leakage current in a semiconductor device is the current when the device is reverse biased.. Under reverse bias, an ideal semiconductor device should not conduct any current, however, due to attraction of dissimilar charges, the positive side of the voltage source draws free electrons (majority carriers in the n-region) away from the P-N junction.