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A diode-connected transistor is made by connecting the base and collector of a BJT; the drain and source of a JFET [1] the gate and drain of a MOSFET; Diode-connected transistors are used in current mirrors to provide a voltage drop that tracks that of the other transistor as temperature changes. [2] They also have very low reverse leakage ...
Active full-wave rectification with two MOSFETs and a center tap transformer. Replacing a diode with an actively controlled switching element such as a MOSFET is the heart of active rectification. MOSFETs have a constant very low resistance when conducting, known as on-resistance (R DS(on)). They can be made with an on-resistance as low as 10 ...
If the MOSFET is an n-channel or nMOS FET, then the source and drain are n+ regions and the body is a p region. If the MOSFET is a p-channel or pMOS FET, then the source and drain are p+ regions and the body is a n region. The source is so named because it is the source of the charge carriers (electrons for n-channel, holes for p-channel) that ...
The MOSFET is also capable of handling higher power than the JFET. [33] The MOSFET was the first truly compact transistor that could be miniaturised and mass-produced for a wide range of uses. [6] The MOSFET thus became the most common type of transistor in computers, electronics, [34] and communications technology (such as smartphones). [35]
A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices , such as an insulated-gate bipolar transistor (IGBT) or a thyristor , its main advantages are high switching speed and good efficiency at low voltages.
Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.
Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to withstand a larger reverse-bias voltage in the off-state.
A double-gate MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi. [74] [75] The FinFET (fin field-effect transistor), a type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in 1989. [76] [77]