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Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each branch of the loop is marked with a direction represented by an arrow.
When V GS > V th and V DS < V GS − V th: The transistor is turned on, and a channel has been created which allows current between the drain and the source. The MOSFET operates like a resistor, controlled by the gate voltage relative to both the source and drain voltages. The current from drain to source is modeled as:
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In a depletion-mode MOSFET, the device is normally on at zero gate–source voltage. Such devices are used as load "resistors" in logic circuits (in depletion-load NMOS logic, for example). For N-type depletion-load devices, the threshold voltage might be about −3 V, so it could be turned off by pulling the gate 3 V negative (the drain, by ...
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
The reverse bias safe operating area (or RBSOA) is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed. As long as the collector voltage and collector current stay within the RBSOA during the entire turnoff, the transistor will be undamaged.
The gate driver then adds its own supply voltage to the MOSFET output voltage when driving the high-side MOSFETs to achieve a V GS equal to the gate driver supply voltage. [8] Because the low-side V GS is the gate driver supply voltage, this results in very similar V GS values for high-side and low-side MOSFETs.
The area of an individual device reduces by 51%, because area is length times width. The capacitance associated with the device, C, is reduced by 30% (0.7×), because capacitance varies with area over distance. To keep the electric field unchanged, the voltage, V, is reduced by 30% (0.7×), because voltage is field times length.