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Doping of a pure silicon array. Silicon based intrinsic semiconductor becomes extrinsic when impurities such as boron and antimony are introduced.. In semiconductor production, doping is the intentional introduction of impurities into an intrinsic (undoped) semiconductor for the purpose of modulating its electrical, optical and structural properties.
In semiconductor physics, a donor is a dopant atom that, when added to a semiconductor, can form a n-type region. Phosphorus atom acting as a donor in the simplified 2D silicon lattice. For example, when silicon (Si), having four valence electrons , is to be doped as a n-type semiconductor , elements from group V like phosphorus (P) or arsenic ...
The addition of a dopant to a semiconductor, known as doping, has the effect of shifting the Fermi levels within the material. [ citation needed ] This results in a material with predominantly negative ( n-type ) or positive ( p-type ) charge carriers depending on the dopant variety.
An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor.
A semiconductor is a material that is between the conductor and insulator in ability to conduct electrical current. [1] In many cases their conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure.
Semiconductor doping with boron, phosphorus, or arsenic is a common application of ion implantation. When implanted in a semiconductor, each dopant atom can create a charge carrier in the semiconductor after annealing. A hole can be created for a p-type dopant, and an electron for an n-type dopant. This modifies the conductivity of the ...
Metal–oxide–semiconductor structure on P-type silicon. Another example of a depletion region occurs in the MOS capacitor. It is shown in the figure to the right, for a P-type substrate. Supposing that the semiconductor initially is charge neutral, with the charge due to holes exactly balanced by the negative charge due to acceptor doping ...
In intrinsic semiconductors the number of excited electrons and the number of holes are equal: n = p. This may be the case even after doping the semiconductor, though only if it is doped with both donors and acceptors equally. In this case, n = p still holds, and the semiconductor remains intrinsic, though doped.