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FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
A dual-gate MOSFET often functions as a "one-transistor" cascode [citation needed]. Common in the front ends of sensitive VHF receivers, a dual-gate MOSFET is operated as a common-source amplifier with the primary gate (usually designated "gate 1" by MOSFET manufacturers) connected to the input and the second gate grounded (bypassed ...
A double-gate MOSFET was first demonstrated in 1984 by Electrotechnical Laboratory researchers Toshihiro Sekigawa and Yutaka Hayashi. [43] [44] FinFET (fin field-effect transistor), a type of 3D non-planar multi-gate MOSFET, originated from the research of Digh Hisamoto and his team at Hitachi Central Research Laboratory in 1989. [45] [46]
A double-gate FinFET device. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
The dual-gate MOSFET has a tetrode configuration, where both gates control the current in the device. It is commonly used for small-signal devices in radio frequency applications where biasing the drain-side gate at constant potential reduces the gain loss caused by Miller effect , replacing two separate transistors in cascode configuration.
Metal–oxide–semiconductor field-effect transistor (MOSFET), showing gate (G), body (B), source (S) and drain (D) terminals. The gate is separated from the body by an insulating layer (white). A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern ...
Enhancement-mode MOSFETs (metal–oxide–semiconductor FETs) are the common switching elements in most integrated circuits. These devices are off at zero gate–source voltage. NMOS can be turned on by pulling the gate voltage higher than the source voltage, PMOS can be turned on by pulling the gate voltage lower than the source voltage.
The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors. The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as a switch in a single device.