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In semiconductor laser theory, the optical gain is produced in a semiconductor material. The choice of material depends on the desired wavelength and properties such as modulation speed. It may be a bulk semiconductor, but more often a quantum heterostructure. Pumping may be electrically or optically . All these structures can be described in a ...
Optical gain is the most important requirement for the realization of a semiconductor laser because it describes the optical amplification in the semiconductor material. This optical gain is due to stimulated emission associated with light emission created by recombination of electrons and holes .
[1] [2] For semiconductor lasers, the saturation effect is negligible. We derived the gain g for a Fabry-Perot semiconductor laser based on the density matrix equations and expressions for the natural linewidth. [1] [2] Thus, the linewidth theory [2] [8] [9] is an integral part of the nonlinear theory.
The laser diode rate equations model the electrical and optical performance of a laser diode. This system of ordinary differential equations relates the number or density of photons and charge carriers in the device to the injection current and to device and material parameters such as carrier lifetime, photon lifetime, and the optical gain.
Below the threshold, the laser's output power rises slowly with increasing excitation. Above threshold, the slope of power vs. excitation is orders of magnitude greater. The linewidth of the laser's emission also becomes orders of magnitude smaller above the threshold than it is below. Above the threshold, the laser is said to be lasing.
One of the most interesting features of any VECSEL is the small thickness of the semiconductor gain region in the direction of propagation, less than 100 nm. In contrast, a conventional in-plane semiconductor laser entails light propagation over distances of from 250 μm upward to 2 mm or longer.