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Beta is a convenient figure of merit to describe the performance of a bipolar transistor, but is not a fundamental physical property of the device. Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base–emitter voltage; the base current could be considered a defect and ...
An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily forming an electronic switch. It was developed to combine high efficiency with fast switching. It was developed to combine high efficiency with fast switching.
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
A graphical representation of the current and voltage properties of a transistor; the bias is selected so that the operating point permits maximum signal amplitude without distortion. In electronics, biasing is the setting of DC (direct current) operating conditions (current and voltage) of an electronic component that processes time-varying ...
The transistor continuously monitors V diff and adjusts its emitter voltage to equal V in minus the mostly constant V BE (approximately one diode forward voltage drop) by passing the collector current through the emitter resistor R E. As a result, the output voltage follows the input voltage variations from V BE up to V +; hence the name ...
Bipolar transistors offer high speed, high gain, and low output impedance with relatively high power consumption per device, which are excellent properties for high-frequency analog amplifiers including low noise radio frequency (RF) amplifiers that only use a few active devices, while CMOS technology offers high input impedance and is ...
A heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) that uses different semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it can handle signals of very high frequencies, up to several hundred GHz .
BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens)The BC107, BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [1] and many other countries from the 1960s.