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The negative swing of the output will not dip below about −0.6 V, assuming a silicon PN diode. [1] A clamper (or clamping circuit or clamp) is an electronic circuit that fixes either the positive or the negative peak excursions of a signal to a defined voltage by adding a variable positive or negative DC voltage to it. [2]
Baker clamp is a generic name for a class of electronic circuits that reduce the storage time of a switching bipolar junction transistor (BJT) by applying a nonlinear negative feedback through various kinds of diodes. The reason for slow turn-off times of saturated BJTs is the stored charge in the base.
A transient-voltage-suppression diode can respond to over-voltages faster than other common over-voltage protection components such as varistors or gas discharge tubes. The actual clamping occurs in roughly one picosecond, but in a practical circuit the inductance of the wires leading to the device imposes a higher limit. This makes transient ...
This simple diode clamp will clamp the negative peaks of the incoming waveform to the common rail voltage. A diode clamp circuit can take a periodic alternating current signal that oscillates between positive and negative values, and vertically displace it such that either the positive or the negative peaks occur at a prescribed level. The ...
The circuits are now known as Baker clamps. One of those clamp circuits used a single germanium diode to clamp a silicon transistor in a circuit configuration that is the same as the Schottky transistor. [22]: 11, 30 The circuit relied on the germanium diode having a lower forward voltage drop than a silicon diode would have.
The "trick" is that instead of clamping to +5 and GND they clamp to the output of two regulated voltages. This allows the clamping diodes to turn on earlier and is therefore better at eliminating overshoot and undershoot. 1) This text is not part of my submission, only the figure itself is. Rewrite your own summary.
The circuits are now known as Baker clamps. One of those clamp circuits used a single germanium diode to clamp a silicon transistor in a circuit configuration that is the same as the Schottky transistor. [2]: 11, 30 The circuit relied on the germanium diode having a lower forward voltage drop than a silicon diode would have.
While standard silicon diodes have a forward voltage drop of about 0.7 V and germanium diodes 0.3 V, Schottky diodes' voltage drop at forward biases of around 1 mA is in the range of 0.15 V to 0.46 V (see the 1N5817 [6] and 1N5711 [7]), which makes them useful in voltage clamping applications and prevention of transistor saturation.