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Double Data Rate 4 Synchronous Dynamic Random-Access Memory (DDR4 SDRAM) is a type of synchronous dynamic random-access memory with a high bandwidth ("double data rate") interface. Released to the market in 2014, [ 2 ] [ 3 ] [ 4 ] it is a variant of dynamic random-access memory (DRAM), some of which have been in use since the early 1970s, [ 5 ...
Compression Attached Memory Module (CAMM) is a memory module form factor which uses a land grid array, and developed at Dell by engineer Tom Schnell as a replacement for DIMMs and SO-DIMMs which use edge connectors and had been in use for about 25 years. [1] The first SO-DIMMs were introduced by JEDEC in 1997. [2] [3] [4] [5]
The DDR4 SDRAM is a high-speed dynamic random-access memory internally configured as 16 banks, 4 bank groups with 4 banks for each bank group for ×4/×8 and 8 banks, 2 bank groups with 4 banks for each bank group for ×16 DRAM. The DDR4 SDRAM uses an 8n prefetch architecture to achieve high-speed operation.
Assorted SO-DIMM Modules A 200-pin PC2-5300 DDR2 SO-DIMM. A 204-pin PC3-10600 DDR3 SO-DIMM. A SO-DIMM slot on a computer motherboard. A SO-DIMM (pronounced "so-dimm" / ˈ s oʊ d ɪ m /, also spelled "SODIMM") or small outline DIMM, is a smaller alternative to a DIMM, being roughly half the physical size of a regular DIMM. The first SODIMMs had ...
Thus, a 200 MHz memory core is combined with IOs that each operate eight times faster (1600 megabits per second). If the memory has 16 IOs, the total read bandwidth would be 200 MHz x 8 datawords/access x 16 IOs = 25.6 gigabits per second (Gbit/s) or 3.2 gigabytes per second (GB/s).
LPDDR3 went mainstream in 2013, running at 800 MHz DDR (1600 MT/s), offering bandwidth comparable to PC3-12800 notebook memory in 2011 (12.8 GB/s of bandwidth). [11] To achieve this bandwidth, the controller must implement dual-channel memory. For example, this is the case for the Exynos 5 Dual [12] and the 5 Octa. [13]