Search results
Results From The WOW.Com Content Network
Graphene doped with various gaseous species (both acceptors and donors) can be returned to an undoped state by gentle heating in vacuum. [22] [24] Even for dopant concentrations in excess of 10 12 cm −2 carrier mobility exhibits no observable change. [24] Graphene doped with potassium in ultra-high vacuum at low temperature can reduce ...
In addition, it is known that when single-layer graphene is supported on an amorphous material, the thermal conductivity is reduced to about 500 – 600 W⋅m −1 ⋅K −1 at room temperature as a result of scattering of graphene lattice waves by the substrate, [172] [173] and can be even lower for few-layer graphene encased in amorphous ...
In 2011, researchers reported that a three-dimensional, vertically aligned, functionalized multilayer graphene architecture can be an approach for graphene-based thermal interfacial materials with superior thermal conductivity and ultra-low interfacial thermal resistance between graphene and metal. [193]
Graphene is an allotrope of carbon that consists of a single layer of graphite. [15] It has been used in sensors to detect vapour-phase molecules, [ 16 ] [ 17 ] [ 18 ] pH, [ 19 ] proteins, [ 19 ] bacteria, [ 20 ] and simulated chemical warfare agents.
Low-temperature as well as the transfer free graphene growth on substrates is the major concern of graphene research for its practical applications. The transfer free graphene growth on SiO2 covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction has been achieved by tin.
As quoted in an online version of: David R. Lide (ed), CRC Handbook of Chemistry and Physics, 84th Edition.CRC Press. Boca Raton, Florida, 2003; Section 4, Properties of the Elements and Inorganic Compounds; Physical Properties of the Rare Earth Metals
The quantum Hall effect in epitaxial graphene can serve as a practical standard for electrical resistance. The potential of epitaxial graphene on SiC for quantum metrology has been shown since 2010, displaying quantum Hall resistance quantization accuracy of three parts per billion in monolayer epitaxial graphene. [25]
Ballistic conduction differs from superconductivity due to 1) a finite, non-zero resistance and 2) the absence of the Meissner effect in the material. The presence of resistance implies that the heat is dissipated in the leads outside of the "ballistic" conductor, where inelastic scattering effects can take place.