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The introduction of the transistor is often considered one of the most important inventions in history. [1] [2] Transistors are broadly classified into two categories: bipolar junction transistor (BJT) and field-effect transistor (FET). [3] The principle of a field-effect transistor was proposed by Julius Edgar Lilienfeld in 1925. [4]
The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), also known as the metal–oxide–silicon transistor (MOS transistor, or MOS), [71] is a type of field-effect transistor that is fabricated by the controlled oxidation of a semiconductor, typically silicon.
The Early effect in bipolar junction transistors is due to an effective decrease in the base width because of the widening of the base-collector depletion region, resulting in an increase in the collector current with an increase in the collector voltage. The same type of length modulation in MOSFETs is also commonly referred to as Early effect.
In a classic planar field-effect transistor with a long channel, the bottleneck in channel formation occurs far enough from the drain contact that it is electrostatically shielded from the drain by the combination of the substrate and gate, and so classically the threshold voltage was independent of drain voltage. In short-channel devices this ...
The Early effect, named after its discoverer James M. Early , is the variation in the effective width of the base in a bipolar junction transistor (BJT) due to a variation in the applied base-to-collector voltage.
A stylized replica of the first transistor John Bardeen, William Shockley and Walter Brattain at Bell Labs, 1948. According to theories of the time, Shockley's field effect transistor, a cylinder coated thinly with silicon and mounted close to a metal plate, should have worked. He ordered Brattain and Bardeen to find out why it wouldn't.
He was a researcher at Bell Telephone Laboratories in Murray Hill, New Jersey, and he invented MOSFET (metal–oxide–semiconductor field-effect transistor), which is the basic element in most of today's electronic equipment, with Mohamed Atalla in 1959. [4] They fabricated both PMOS and NMOS devices with a 20 μm process. [5]
Julius Edgar Lilienfeld (April 18, 1882 – August 28, 1963) was an American electrical engineer and physicist who has been credited with the first patent on the field-effect transistor in 1925. He was never able to build a working practical semiconductor device based on his concept. Additionally, because of his failure to publish articles in ...