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The origins of flash memory can be traced back to the development of the floating-gate MOSFET (FGMOS), also known as the floating-gate transistor. [ 11 ] [ 12 ] The original MOSFET was invented at Bell Labs between 1955 and 1960, after Frosch and Derick discovered surface passivation and used their discovery to create the first planar transistors.
The floating-gate MOSFET (FGMOS), also known as a floating-gate MOS transistor or floating-gate transistor, is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) where the gate is electrically isolated, creating a floating node in direct current, and a number of secondary gates or inputs are deposited above the floating ...
FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented and subsequently patented in July 2009 by Oriental Semiconductor Electronics, Ltd. [1] [2] According to Oriental Semiconductor researchers, FJG ram has an ultra-compact cell area of 4-5F 2 (F refers to feature size) and a capacitor-less cell ...
Non-volatile memory typically refers to storage in memory chips, which store data in floating-gate memory cells consisting of floating-gate MOSFETs (metal–oxide–semiconductor field-effect transistors), including flash memory storage such as NAND flash and solid-state drives (SSD).
Whereas the single floating-gate variety is currently responsible for the flash memory in your USB keys and SSDs, the second floating gate lets bits of data stay in an active, ready state, but the ...
Non-volatile memory (such as EPROM, EEPROM and flash memory) uses floating-gate memory cells, which consist of a single floating-gate transistor per cell. Most types of semiconductor memory have the property of random access , [ 4 ] which means that it takes the same amount of time to access any memory location, so data can be efficiently ...
A floating-gate memory cell is basically an MOS transistor with a gate completely surrounded by dielectrics (Fig. 1.2), the floating-gate (FG), and electrically governed by a capacitive-coupled control-gate (CG). Being electrically isolated, the FG acts as the storing electrode for the cell device.
Flash memory stores data in individual memory cells, which are made of floating-gate MOSFET transistors. Traditionally, each cell had two possible states (each with one voltage level), with each state representing either a one or a zero, so one bit of data was stored in each cell in so-called single-level cells, or SLC flash memory. SLC memory ...