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An account of the early history of scanning electron microscopy has been presented by McMullan. [2] [3] Although Max Knoll produced a photo with a 50 mm object-field-width showing channeling contrast by the use of an electron beam scanner, [4] it was Manfred von Ardenne who in 1937 invented [5] a microscope with high resolution by scanning a very small raster with a demagnified and finely ...
A scanning transmission electron microscope (STEM) is a type of transmission electron microscope (TEM). Pronunciation is [stɛm] or [ɛsti:i:ɛm]. As with a conventional transmission electron microscope (CTEM), images are formed by electrons passing through a sufficiently thin specimen. However, unlike CTEM, in STEM the electron beam is focused ...
Electron backscatter diffraction (EBSD) is a scanning electron microscopy (SEM) technique used to study the crystallographic structure of materials. EBSD is carried out in a scanning electron microscope equipped with an EBSD detector comprising at least a phosphorescent screen, a compact lens and a low-light camera. In the microscope an ...
Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). [1] It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions.
High-resolution transmission electron microscopy is an imaging mode of specialized transmission electron microscopes that allows for direct imaging of the atomic structure of samples. [1] [2] It is a powerful tool to study properties of materials on the atomic scale, such as semiconductors, metals, nanoparticles and sp 2-bonded carbon (e.g ...
Electron channelling contrast imaging (ECCI) is a scanning electron microscope (SEM) diffraction technique used in the study of defects in materials. These can be dislocations or stacking faults that are close to the surface of the sample, low angle grain boundaries or atomic steps.
Electron-beam-induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM). It is most commonly used to identify buried junctions or defects in semiconductors, or to examine minority carrier properties.
The high sensitivity of dynamical scanning capacitance microscopy, [8] in which the capacitance signal is modulated periodically by the tip motion of the atomic force microscope (AFM), was used to image compressible and incompressible strips in a two-dimensional electron gas buried 50 nm below an insulating layer in a large magnetic field and ...