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The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948, [12] was for three decades the device of choice in the design of discrete and integrated circuits. Nowadays, the use of the BJT has declined in favor of CMOS technology in the design of digital integrated circuits.
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.
The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
A bipolar junction transistor (BJT) has terminals labeled base, collector and emitter. A small current at the base terminal, flowing between the base and the emitter, can control or switch a much larger current between the collector and emitter. A field-effect transistor (FET) has terminals labeled gate, source and drain. A voltage at the gate ...
The circuit can be explained by viewing the transistor as being under the control of negative feedback. From this viewpoint, a common-collector stage (Fig. 1) is an amplifier with full series negative feedback. In this configuration (Fig. 2 with β = 1), the entire output voltage V out is placed contrary and in series with the input voltage V in.