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Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction. This causes local heating, progressing into a short between collector and emitter.
A resistor removed from a high voltage tube circuit shows damage from voltaic arcing on the resistive metal oxide layer. Resistors can fail open or short, alongside their value changing under environmental conditions and outside performance limits. Examples of resistor failures include: Manufacturing defects causing intermittent problems.
IEC 60204-1 is scoped to cover the electrical equipment of machines that operate in the low-voltage range, generally accepted to be 1000 V a.c. or less, or 1500 V d.c. or less.
Current limiting is the practice of imposing a limit on the current that may be delivered to a load to protect the circuit generating or transmitting the current from harmful effects due to a short-circuit or overload. The term "current limiting" is also used to define a type of overcurrent protective device.
short-circuit test A test of machines or apparatus where the load terminals are directly connected; usually done at reduced power to prevent damage, but destructive short circuit testing may be carried out on circuit protective devices. short circuit A path in a circuit that has negligible resistance; often un-intended, a fault. shunt
In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior. [2]
Conditional short-circuit current is the value of the alternating current component of a prospective current, which a switch without integral short-circuit protection, but protected by a suitable short circuit protective device (SCPD) in series, can withstand for the operating time of the current under specified test conditions.
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.