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Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction. This causes local heating, progressing into a short between collector and emitter.
Generally this means that high current circuits such as on chip power regulators use metal–oxide–semiconductor field-effect transistors (MOSFETs) for efficient control, and 'sea of logic' use conventional CMOS structures, while those portions of specialized very high performance circuits such as ECL dividers and LNAs use bipolar devices.
requirements for determination of the short circuit current rating of the electrical equipment; protective bonding requirements, terminology, and protection against electric shock; Incoming supply requirements and switching; requirements pertaining to safe torque off, emergency stop, and control circuit protection;
A resistor removed from a high voltage tube circuit shows damage from voltaic arcing on the resistive metal oxide layer. Resistors can fail open or short, alongside their value changing under environmental conditions and outside performance limits. Examples of resistor failures include: Manufacturing defects causing intermittent problems.
Reference voltage vs free-air temperature at test conditions. Design-center (middle plot) and worst-case deviation of ±2% (upper and lower plots) [12] The nominal reference voltage, V REF =2.495 V, stated in a datasheet, is tested in zener mode at an ambient temperature of +25 °C (77 °F), and I CA =10 mA. [13]
Current limiting is the practice of imposing a limit on the current that may be delivered to a load to protect the circuit generating or transmitting the current from harmful effects due to a short-circuit or overload. The term "current limiting" is also used to define a type of overcurrent protective device.
In electronics, emitter-coupled logic (ECL) is a high-speed integrated circuit bipolar transistor logic family. ECL uses an overdriven bipolar junction transistor (BJT) differential amplifier with single-ended input and limited emitter current to avoid the saturated (fully on) region of operation and the resulting slow turn-off behavior. [2]
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the transistor. It is used intentionally in the design of certain ESD protection devices integrated onto semiconductor chips.