Ads
related to: positive charge on semiconductor gate opener is made of aluminum
Search results
Results From The WOW.Com Content Network
The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. [1] They used silicon as channel material and a non-self-aligned aluminum gate. [2]
Both floating gate flash and charge trapping flash use a stacked gate structure in which a floating gate or charge trapping layer lies immediately above the channel, and below a control gate. The floating gate or charge trapping layer is insulated from the channel by a tunnel oxide layer and from the control gate by a gate oxide layer.
Gate oxide at NPNP transistor made by Frosch and Derrick, 1957 [1]. The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET (metal–oxide–semiconductor field-effect transistor) from the underlying source and drain terminals as well as the conductive channel that connects source and drain when the transistor is turned on.
In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing approach whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned ...
In the semiconductor at the smaller voltage shown in the top panel, the positive charge placed on the left face of the insulator lowers the energy of the valence band edge. Consequently, these states are fully occupied out to a so-called depletion depth where the bulk occupancy reestablishes itself because the field cannot penetrate further.
MOS stands for metal-oxide-semiconductor, reflecting the way MOS-transistors were originally constructed, predominantly before the 1970s, with gates of metal, typically aluminium. Since around 1970, however, most MOS circuits have used self-aligned gates made of polycrystalline silicon , a technology first developed by Federico Faggin at ...