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  2. RCA clean - Wikipedia

    en.wikipedia.org/wiki/RCA_clean

    The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America.

  3. Piranha solution - Wikipedia

    en.wikipedia.org/wiki/Piranha_solution

    Molecular models of the different molecules active in Piranha solution: peroxysulfuric acid (H 2 SO 5) and hydrogen peroxide (H 2 O 2). Piranha solution, also known as piranha etch, is a mixture of sulfuric acid (H 2 SO 4) and hydrogen peroxide (H 2 O 2). The resulting mixture is used to clean organic residues off substrates, for example ...

  4. Etching (microfabrication) - Wikipedia

    en.wikipedia.org/wiki/Etching_(microfabrication)

    Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...

  5. Microfabrication - Wikipedia

    en.wikipedia.org/wiki/Microfabrication

    RCA-1 clean in ammonia-peroxide solution removes organic contamination and particles; RCA-2 cleaning in hydrogen chloride-peroxide mixture removes metallic impurities. Sulfuric acid-peroxide mixture (a.k.a. Piranha) removes organics. Hydrogen fluoride removes native oxide from silicon surface. These are all wet cleaning steps in solutions.

  6. Plasma-activated bonding - Wikipedia

    en.wikipedia.org/wiki/Plasma-activated_bonding

    The decrease of temperature is based on the increase of bonding strength using plasma activation on clean wafer surfaces. Further, the increase is caused by elevation in amount of Si-OH groups, removal of contaminants on the wafer surface, the enhancement of viscous flow of the surface layer and the enhanced diffusivity of water and gas trapped at the interface. [2]

  7. Silanization of silicon and mica - Wikipedia

    en.wikipedia.org/wiki/Silanization_of_silicon...

    Piranha solution in particular constitutes quite a harsh treatment that can potentially damage the integrity of the silicon surface. Finlayson-Pitts et al. investigated the effect of certain treatments on silicon and concluded that both the roughness (3-5 Å) and the presence of scattered large particles were preserved after 1 cycle of plasma ...

  8. Chemistry of photolithography - Wikipedia

    en.wikipedia.org/wiki/Chemistry_of_photolithography

    In photolithography, photoresist compounds are used create a mask on the surface of a silicon wafer. The mask allows for precise control over the doping and etching processes used to form devices on silicon wafers. It is important for the mask to hold up to chemical attack during the etching process.

  9. Ultra-high-purity steam for oxidation and annealing - Wikipedia

    en.wikipedia.org/wiki/Ultra-high-purity_steam...

    Oxidation of silicon is a common and frequent step in the manufacture of integrated circuits (IC). The goal of oxidation is to grow a high quality, uniform oxide layer on a silicon substrate. During oxidation, a chemical reaction between the oxidants and the silicon atoms produces a layer of oxide on the silicon surface of the wafer.