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The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material. For most epitaxial growths, the new layer is usually crystalline and each crystallographic domain of the overlayer ...
Epitaxial growth and semiconductor device fabrication are technologies used to develop stacked crystalline layers of different materials with specific semiconductor properties on a crystalline substrate, commonly silicon or silicon carbide (SiC) materials, to achieve the desired performance of the microelectronic devices, such as transistors ...
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
The growth of epitaxial (homogeneous or heterogeneous) thin films on a single crystal surface depends critically on the interaction strength between adatoms and the surface. While it is possible to grow epilayers from a liquid solution, most epitaxial growth occurs via a vapor phase technique such as molecular beam epitaxy (MBE).
Solar cells, or photovoltaic cells (PV) for producing electric power from sunlight can be grown as thick epi wafers on a monocrystalline silicon "seed" wafer by chemical vapor deposition (CVD), and then detached as self-supporting wafers of some standard thickness (e.g., 250 μm) that can be manipulated by hand, and directly substituted for wafer cells cut from monocrystalline silicon ingots.
The latter phenomenon is accordingly observed in nearly epitaxial growth processes, where certain crystallographic axes of crystals in the layer tend to align along a particular crystallographic orientation of the (single-crystal) substrate. Tailoring the texture on demand has become an important task in thin film technology.
Epitaxial graphene growth on silicon carbide (SiC) by thermal decomposition is a method to produce large-scale few-layer graphene (FLG). Graphene is one of the most promising nanomaterials for the future because of its various characteristics, like strong stiffness and high electric and thermal conductivity .
The simplest cameras for X-ray powder diffraction consist of a small capillary and either a flat plate detector (originally a piece of X-ray film, now more and more a flat-plate detector or a CCD-camera) or a cylindrical one (originally a piece of film in a cookie-jar, but increasingly bent position sensitive detectors are used). The two types ...