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Molecular beam epitaxy system Veeco Gen II at the FZU – Institute of Physics of the Czech Academy of Sciences. The system is designed for growth of monocrystalline semiconductors, semiconducting heterostructures, materials for spintronics and other compound material systems containing Al, Ga, As, P, Mn, Cu, Si and C.
Molecular beams are useful for fabricating thin films in molecular beam epitaxy and artificial structures such as quantum wells, quantum wires, and quantum dots. Molecular beams have also been applied as crossed molecular beams. The molecules in the molecular beam can be manipulated by electrical fields and magnetic fields. [1]
A common technique used in compound semiconductor growth is molecular beam epitaxy (MBE). In this method, a source material is heated to produce an evaporated beam of particles, which travel through a very high vacuum (10 −8 Pa; practically free space) to the substrate and start epitaxial growth.
Fraunhofer IAF Selects GEN200 MBE for Optoelectronic Device Production PLAINVIEW, N.Y.--(BUSINESS WIRE)-- Veeco Instruments Inc. (NAS: VECO) announced today that the Fraunhofer Institute for ...
Chemical beam epitaxy (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III-V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular beams of reactive gases, typically as the hydride or a metalorganic. The term ...
John R. Arthur Jr. is an American materials scientist best known as a pioneer of molecular beam epitaxy. Together with Alfred Y. Cho, Arthur pioneered molecular beam epitaxy at Bell Laboratories, where he published a paper in July 1968 that described construction of epitaxial gallium arsenide layers using molecular beam epitaxy.
He is known as the "father of molecular beam epitaxy"; a technique he developed at that facility in the late 1960s. He is also the co-inventor, with Federico Capasso of quantum cascade lasers at Bell Labs in 1994.
The Knudsen cell is used to measure the vapor pressures of a solid with very low vapor pressure. Such a solid forms a vapor at low pressure by sublimation.The vapor slowly effuses through the pinhole, and the loss of mass is proportional to the vapor pressure and can be used to determine this pressure. [1]