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The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers.
In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and ...
Edge-defined film-fed growth or EFG was developed for sapphire growth in the late 1960s by Harold LaBelle and A. Mlavsky at Tyco Industries. [4] A shaper (also referred to as a die) having dimensions approximately equal to the crystal to be grown rests above the surface of the melt which is contained in a crucible.
Most true synthetic alexandrite is grown by the Czochralski method, known as “pulling”.Another method is a “floating zone”, developed in 1964 by an Armenian scientist Khachatur Saakovich Bagdasarov, of the Russian (former Soviet) Institute of Crystallography, Moscow.
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It can be grown from a melt by the Czochralski technique. It belongs to the monoclinic system with space group C s 2 -Cm. Each neodymium ion replaces a yttrium ion in the YCOB crystal structure.
This is done through the process of Czochralski growth, which is diagramed in the adjacent image, and produces a single intact diamond cubic silicon crystal. Due to its structure, monocrystalline silicon is anisotropic , which gives it different structural and electrical properties in different plane directions.