Search results
Results From The WOW.Com Content Network
Jan Czochralski (Polish pronunciation: [ˈjan t͡ʂɔˈxralskʲi]; 23 October 1885 – 22 April 1953) was a Polish chemist who invented the Czochralski method, which is used for growing single crystals and in the production of semiconductor wafers.
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Ludwik Zamenhof: creator of Esperanto, the most successful constructed language in the world. [83] Casimir Zeglen, inventor of one of the first bulletproof vests. [84] [85] Witold Zglenicki: geologist and inventor. Pioneer of oil extraction from sea bottom. [86]
Gordon Kidd Teal (January 10, 1907 – January 7, 2003) was an American engineer. He invented a method of applying the Czochralski method to produce extremely pure germanium single crystals used in making greatly improved transistors. [1]
Edge-defined film-fed growth or EFG was developed for sapphire growth in the late 1960s by Harold LaBelle and A. Mlavsky at Tyco Industries. [4] A shaper (also referred to as a die) having dimensions approximately equal to the crystal to be grown rests above the surface of the melt which is contained in a crucible.
In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of material. In the Czochralski process a seed crystal is required to create a larger crystal, or ingot. This seed crystal is dipped into the pure molten silicon and ...
For a layman English-speaker, it is hard to know how to pronounce this term. I think the article should include some guidance on the pronunciation of "Czochralski". --Westwind273 19:15, 26 March 2013 (UTC)
This is done through the process of Czochralski growth, which is diagramed in the adjacent image, and produces a single intact diamond cubic silicon crystal. Due to its structure, monocrystalline silicon is anisotropic , which gives it different structural and electrical properties in different plane directions.