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The first practical application of semiconductors in electronics was the 1904 development of the cat's-whisker detector, a primitive semiconductor diode used in early radio receivers. Developments in quantum physics led in turn to the invention of the transistor in 1947 [ 7 ] and the integrated circuit in 1958.
In recent physics literature, a large majority of the electronic structures and band plots are calculated using density-functional theory (DFT), which is not a model but rather a theory, i.e., a microscopic first-principles theory of condensed matter physics that tries to cope with the electron-electron many-body problem via the introduction of ...
Mark S. Lundstrom is an American electrical engineering researcher, educator, and author. He is known for contributions to the theory, modeling, and understanding of semiconductor devices, especially nanoscale transistors, [1] [2] and as the creator of the nanoHUB, a major online resource for nanotechnology.
The Transfer Length Method or the "Transmission Line Model" (both abbreviated as TLM) is a technique used in semiconductor physics and engineering to determine the specific contact resistivity between a metal and a semiconductor.
In solid-state physics of semiconductors, carrier generation and carrier recombination are processes by which mobile charge carriers (electrons and electron holes) are created and eliminated. Carrier generation and recombination processes are fundamental to the operation of many optoelectronic semiconductor devices , such as photodiodes , light ...
Semiconductor materials, which are used to fabricate the superlattice structures, may be divided by the element groups, IV, III-V and II-VI. While group III-V semiconductors (especially GaAs/Al x Ga 1−x As) have been extensively studied, group IV heterostructures such as the Si x Ge 1−x system are much more difficult to realize because of ...
In a semiconductor, the doping level also affects the Mott transition. It has been observed that higher dopant concentrations in a semiconductor creates internal stresses that increase the free energy (acting as a change in pressure) of the system, [16] thus reducing the ionization energy.
The DLTS technique has a higher sensitivity than almost any other semiconductor diagnostic technique. For example, in silicon it can detect impurities and defects at a concentration of one part in 10 12 of the material host atoms. This feature together with a technical simplicity of its design made it very popular in research labs and ...