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The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). [35] The IGBT is widely used in consumer electronics, industrial technology, the energy sector, aerospace electronic devices, and transportation.
This power loss is simply = where: I leakage is the leakage current of the switch, and; V is the voltage across the switch. Dynamic power losses are due to the switching behavior of the selected pass devices (MOSFETs, power transistors, IGBTs, etc.). These losses include turn-on and turn-off switching losses and switch transition losses.
Some common power devices are the power MOSFET, power diode, thyristor, and IGBT. The power diode and power MOSFET operate on similar principles to their low-power counterparts, but are able to carry a larger amount of current and are typically able to withstand a larger reverse-bias voltage in the off-state .
This is a switched-mode power supply with a similar circuit configuration to the boost converter and the buck converter. The output voltage is adjustable based on the duty cycle of the switching transistor. One possible drawback of this converter is that the switch does not have a terminal at ground; this complicates the driving circuitry.
S. Eio., N. Shammas., “IGBT Tail Current Reduction by Current Injection,” 43rd International Universities Power Engineering Conference, Padova, Italy,1 – 4 September 2008 S. Eio., N. Shammas., “A chopper circuit with current injection technique for increasing operating frequency,” 9th International Seminar On Power Semiconductors ...
Electric power depends on current and voltage: the power loss rises proportional to both current and voltage. In low voltage converters (around 10 volts and less), the voltage drop of a diode (typically around 0.7 to 1 volt for a silicon diode at its rated current) has an adverse effect on efficiency.
A gate driver is a power amplifier that accepts a low-power input from a controller IC and produces a high-current drive input for the gate of a high-power transistor such as an IGBT or power MOSFET. Gate drivers can be provided either on-chip or as a discrete module.
The thyristor dominated the FACTs and HVDC world until the late 20th century, when the IGBT began to match its power ratings. [9] With the IGBT, the first voltage-sourced converters and STATCOMs began to enter the FACTs world. A prototype 1 MVAr STATCOM was described in a report by Empire State Electric Energy Research Corporation in 1987. [10]