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The alloy can be reacted with water to form hydrogen gas(H2), aluminum hydroxide and gallium metal. [2] Normally, aluminum does not react with water, since it quickly reacts in air to form a passivation layer of aluminum oxide. AlGa alloy is able to create aluminum nanoparticles for the hydrogen producing reaction.
Aluminium gallium indium phosphide (Al Ga In P, also AlInGaP, InGaAlP, etc.) is a semiconductor material that provides a platform for the development of multi-junction photovoltaics and optoelectronic devices. It has a direct bandgap ranging from ultraviolet to infrared photon energies. [1]
Gallium arsenide is an important semiconductor material for high-cost, high-efficiency solar cells and is used for single-crystalline thin-film solar cells and for multi-junction solar cells. [35] The first known operational use of GaAs solar cells in space was for the Venera 3 mission, launched in 1965.
Aluminium gallium antimonide, also known as gallium aluminium antimonide or AlGaSb (Al x Ga 1-x Sb), is a ternary III-V semiconductor compound. It can be considered as an alloy between aluminium antimonide and gallium antimonide. The alloy can contain any ratio between aluminium and gallium. AlGaSb refers generally to any composition of the alloy.
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Aluminium gallium arsenide (also gallium aluminium arsenide) (Al x Ga 1−x As) is a semiconductor material with very nearly the same lattice constant as GaAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between GaAs and AlAs .
Indium gallium phosphide is a solid solution of indium phosphide and gallium phosphide. Ga 0.5 In 0.5 P is a solid solution of special importance, which is almost lattice matched to GaAs . This allows, in combination with (Al x Ga 1−x ) 0.5 In 0.5 , the growth of lattice matched quantum wells for red emitting semiconductor lasers , e.g., red ...
Quantum wells are formed in semiconductors by having a material, like gallium arsenide, sandwiched between two layers of a material with a wider bandgap, like aluminum arsenide. (Other examples: a layer of indium gallium nitride sandwiched between two layers of gallium nitride.)