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MOSFET (PMOS and NMOS) demonstrations Date Channel length Oxide thickness [1] MOSFET logic Researcher(s) Organization Ref; June 1960: 20,000 nm: 100 nm: PMOS: Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [2] [3] NMOS: 10,000 nm: 100 nm: PMOS Mohamed M. Atalla, Dawon Kahng: Bell Telephone Laboratories [4] NMOS May 1965: 8,000 nm ...
In a given technology node, such as the 90-nm CMOS process, the threshold voltage depends on the choice of oxide and on oxide thickness. Using the body formulas above, V T N {\displaystyle V_{TN}} is directly proportional to γ {\displaystyle \gamma } , and t O X {\displaystyle t_{OX}} , which is the parameter for oxide thickness.
This "complementary" or CMOS type of switch uses one P-MOS and one N-MOS FET to counteract the limitations of the single-type switch. The FETs have their drains and sources connected in parallel, the body of the P-MOS is connected to the high potential ( V DD ) and the body of the N-MOS is connected to the low potential ( gnd ).
Cascode Voltage Switch Logic (CVSL) refers to a CMOS-type logic family which is designed for certain advantages. It requires mainly N-channel MOSFET transistors to implement the logic using true and complementary input signals, and also needs two P-channel transistors at the top to pull one of the outputs high. This logic family is also known ...
CMOS inverter (a NOT logic gate). Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss ", / s iː m ɑː s /, /-ɒ s /) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. [1]
A transmission gate (TG) is an analog gate similar to a relay that can conduct in both directions or block by a control signal with almost any voltage potential. [1] It is a CMOS-based switch, in which PMOS passes a strong 1 but poor 0, and NMOS passes strong 0 but poor 1.
The basic TFET structure is similar to a MOSFET except that the source and drain terminals of a TFET are doped of opposite types (see figure). A common TFET device structure consists of a P-I-N (p-type, intrinsic, n-type) junction, in which the electrostatic potential of the intrinsic region is controlled by a gate terminal.
Multi-threshold CMOS (MTCMOS) is a variation of CMOS chip technology which has transistors with multiple threshold voltages (V th) in order to optimize delay or power.The V th of a MOSFET is the gate voltage where an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor.