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Simplified cross section of a planar NPN bipolar junction transistor. BJTs consists of three differently doped semiconductor regions: the emitter region, the base region and the collector region. These regions are, respectively, p type, n type and p type in a PNP transistor, and n type, p type and n type in an NPN transistor.
Alternately, if a germanium PNP device was used, it would have significantly different characteristics than the silicon NPN transistor. In the quasi-complementary topology, the performance of the lower pull pair, which uses a single NPN transistor, more closely matches the performance of the upper push pair, which consists of two NPN ...
The 2N2907 (PNP) and 2N2222 (NPN) are complementary transistor pairs. [4] Other types of transistors with different properties and connections have different part numbers. The prefix of each part number varies for each physical package type. Pin connections vary with different part numbers.
BC108 family transistors from various manufacturers (ITT, CEMI, SGS-ATES, Siemens)The BC107, BC108 and BC109 are general-purpose low power silicon NPN bipolar junction transistors found very often in equipment and electronics books/articles from Europe, Australia [1] and many other countries from the 1960s.
The expressions are derived for a PNP transistor. For an NPN transistor, n has to be replaced by p, and p has to be replaced by n in all expressions below. The following assumptions are involved when deriving ideal current-voltage characteristics of the BJT [7] Low level injection; Uniform doping in each region with abrupt junctions
In a diode model two diodes are connected back-to-back to make a PNP or NPN bipolar junction transistor (BJT) equivalent. This model is theoretical and qualitative. This model is theoretical and qualitative.
Transistors (devices that enable current switching) also make use of extrinsic semiconductors. Bipolar junction transistors (BJT), which amplify current, are one type of transistor. The most common BJTs are NPN and PNP type. NPN transistors have two layers of n-type semiconductors sandwiching a p-type semiconductor.
The NPN BJT (n-type bipolar junction transistor) and nMOS (n-type metal oxide semiconductor field effect transistor) have greater conductance than their PNP and pMOS relatives, so may be more commonly used for these outputs. Open outputs using PNP and pMOS transistors will use the opposite internal voltage rail used by NPN and nMOS transistors.